LAM 810-068158-015

Product Name: LAM Research 810-068158-015 — Gas Distribution Showerhead (300 mm, Single-Frequency) Product Overview: A single-frequency (13.56 MHz or 2 MHz) gas showerhead for LAM etch chambers, optimized for high-throughput etch applications.

LAM 810-069751-114

Product Name: LAM Research 810-069751-114 — Chamber Liner Kit (300 mm Etch Chamber) Product Overview: A full replacement liner kit for LAM 300 mm etch chambers, including chamber wall protection, grounding straps, and consumable shield components.

LAM 810-072906-005

Product Name: LAM Research 810-072906-005 — RF Matching Network (300 mm, 2 MHz/13.56 MHz) Product Overview: An automatic RF impedance matching network for dual-frequency LAM etch chambers, ensuring maximum power transfer from the RF generator to the plasma load.

LAM 810-072907-005

Product Name: LAM Research 810-072907-005 — RF Matching Network (300 mm, Single-Frequency 13.56 MHz) Product Overview: An automatic RF impedance matching network for single-frequency (13.56 MHz) LAM etch chambers.

LAM 810-082745-003

Product Name: LAM Research 810-082745-003 — Helium Backside Cooling Manifold Assembly Product Overview: A precision helium gas manifold assembly for backside wafer cooling on LAM 300 mm ceramic ESC chucks, enabling sub-ambient to elevated temperature processing.

LAM 810-091934-00

Product Name: LAM Research 810-091934-00 — RF Bias Power Supply (300 mm, 13.56 MHz, 4000 W) Product Overview: A high-frequency RF bias power supply for LAM 300 mm etch chambers, providing independent control of ion bombardment energy at the wafer surface.

LAM 810-099175-012

Product Name: LAM Research 810-099175-012 — Edge Ring / Wafer Guard Ring (300 mm, Silicon) Product Overview: A silicon edge ring (wafer guard ring) used on LAM 300 mm electrostatic chucks to protect the wafer edge from plasma exposure and reduce edge bevel during etch processes.

LAM 810-102361-222

Product Name: LAM 810-102361-222 — RF Match Network Assembly Product Overview: High-frequency RF match network module used in semiconductor plasma etch and deposition equipment. The unit provides impedance matching between the RF generator and the process chamber to maximize power transfer efficiency.

LAM 810-225420-002

Product Name: LAM 810-225420-002 — Electrostatic Chuck (ESC) Assembly Product Overview: Clamped-type electrostatic chuck designed for 200 mm and 300 mm semiconductor wafer clamping during plasma etch processes. Provides uniform clamping force and backside helium cooling.

LAM 810-234640-312

Product Name: LAM 810-234640-312 — RF Generator (2 MHz) Product Overview: Solid-state RF power generator operating at 2 MHz, designed for high-density plasma etch and PECVD applications. Delivers stable, precisely controlled RF power with fast turn-on/turn-off capability.

LAM 810-520659-001

Product Name: LAM 810-520659-001 — Throttle Valve Assembly Product Overview: Pneumatically actuated throttle valve for precise control of process gas flow in LAM etch and deposition chambers. Provides fast, repeatable position control for pressure regulation.

LAM 810-800081-022

Product Name: LAM 810-800081-022 — Showerhead Electrode Assembly Product Overview: Gas distribution showerhead with integrated RF electrode for uniform plasma generation across the wafer surface. Used in high-density plasma etch and PECVD processes.