LAM 810-234640-312

Technical Specifications:

• Frequency: 2 MHz (fixed)
• Power Output: 0 – 6000 W (continuous)
• Output Impedance: 50 Ω
• Harmonics: < -60 dBc (2nd harmonic), < -70 dBc (3rd harmonic)
• Modulation Bandwidth: DC – 100 kHz
• Efficiency: > 90% at full power

Functional Features:

• Digital envelope control for pulsed plasma operation
• Auto-tuning with integrated match network
• Full reflected power protection with < 5 μs response time
• Ethernet/IP and SECS/GEM communication interface

Performance Parameters:

Material Composition:

• Chassis: Cold-rolled steel with epoxy powder coating
• Heat Sink: Extruded Aluminum 6063-T5
• Power Modules: GaN HEMT transistors on AlN substrates
• PCB: FR-4 with lead-free HASL finish

Structural Features:

• 19″ rack-mount, 4U height
• Front-accessible power modules for hot-swap service
• Forced-air cooling with redundant fans

Working Principle:
A Class-D or Class-E solid-state amplifier topology uses GaN HEMT transistors switched at high frequency. Pulse-width modulation (PWM) controls the envelope of the RF output. A digital signal processor (DSP) manages feedback loops for power, frequency, and VSWR regulation.

Key Advantages:

• GaN technology delivers > 90% efficiency, reducing total cost of ownership
• Sub-100 μs turn-on enables advanced pulsing schemes for critical dimension control
• Full digital control supports recipe-based process tuning

Applicable Industries: Semiconductor etch, PECVD, plasma-enhanced ALD

Installation Requirements:

• Ambient temperature: 15°C – 35°C
• Input power: 200–240 VAC, 3-phase, 50/60 Hz
• Exhaust airflow: minimum 150 CFM per unit
• Grounding: < 1 Ω earth ground

Usage Notes:

• Verify cooling fan operation before each power-up
• Log reflected power events for preventive maintenance
• Replace air filters every 3 months