LAM 810-082745-003

Product Name: LAM Research 810-082745-003 — Helium Backside Cooling Manifold Assembly

Product Overview: A precision helium gas manifold assembly for backside wafer cooling on LAM 300 mm ceramic ESC chucks, enabling sub-ambient to elevated temperature processing.

Category: Others

Description

Technical Specifications:

Type: He Backside Cooling Manifold
Chuck Compatibility: LAM 300 mm Ceramic ESC (810-046xxx Series)
Cooling Gas: Helium (He), 99.999% purity
Temperature Range: -20°C ~ 200°C
Flow Rate: 5 ~ 30 SLM (Standard Liters per Minute)
Pressure: 5 ~ 30 psi
Zones: 1 ~ 5 zones (configurable)

Functional Features:

Multi-zone temperature control — independent zone control for radial uniformity
High thermal conductivity — He provides >10× better heat transfer than N₂
Low particle design — all-metal sealed construction

Performance Parameters:

Parameter	Value
Gas Type	Helium (He) 99.999%
Flow Range	5 ~ 30 SLM
Pressure Range	5 ~ 30 psi
Temp Range	-20°C ~ 200°C
Zones	1 / 3 / 5
Leak Rate	< 1 × 10⁻⁹ mbar·L/s
Response Time (ΔT)	< 30 seconds (full range)

Material Composition:

Manifold Body: 316L Stainless Steel, electropolished
Seals: Indium wire or ConFlat (CF) flange
Tubing: OFHC Copper, 6.35 mm OD
Valves: Pneumatic or solenoid, SS316L body

Structural Features:

Circular manifold matching 300 mm chuck diameter
Internal gas channels with zone isolation
Quick-connect fittings for He supply and exhaust
Thermocouple ports (Type K or Type T) per zone

Working Principle: High-purity Helium flows through the manifold into the gap between the wafer backside and the ESC surface. He’s high thermal conductivity (0.15 W/m·K at 300K, much higher than N₂) enables rapid and uniform heat transfer, controlling wafer temperature from -20°C to 200°C with < 2°C across-wafer uniformity.

Advantages:

Superior thermal control vs. N₂ cooling — critical for CD-critical etch
Multi-zone capability enables advanced thermal profiling
Ultra-low leak rate ensures process stability

Applicable Industries: Semiconductor — Advanced Etch (FinFET, GAA), PECVD, Epitaxy

Model Series: LAM 810-082xxx Series — 300 mm He Cooling Manifold

Installation Requirements:

Connect to He gas supply (99.999%, dew point < -60°C)
Connect exhaust to abatement system
Connect zone thermocouples to temperature controller
Leak test at 30 psi with He leak detector (< 1 × 10⁻⁹ mbar·L/s)

Usage Notes:

Purge manifold with He for 5 minutes before first use
Replace indium seals every 12 months
Monitor He purity — contamination above 5 ppm O₂ degrades performance

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