LAM 810-091934-00

Technical Specifications:

• Type: RF Bias Power Supply
• Frequency: 13.56 MHz (fixed)
• Power Rating: 0 ~ 4000 W
• Impedance: 50 Ω (auto-match)
• Output Voltage: 0 ~ 2000 Vpp
• Output Current: 0 ~ 10 A
• Cooling: Water-cooled (18°C inlet)

Functional Features:

• Independent bias control — decoupled from source power for anisotropic etch tuning
• Auto-matching network — maintains 50 Ω match across all load conditions
• Pulse modulation capable — supports pulsed bias for advanced etch profiles

Performance Parameters:

Material Composition:

• Power Transistors: LDMOS (Laterally Diffused MOS)
• Output Network: PI-network with vacuum variable capacitors
• Housing: 304 Stainless Steel, 19-inch rack (3U)
• Connectors: 7/16 DIN (50 Ω)

Structural Features:

• 19-inch rack-mountable (3U height)
• Front panel: LCD display, rotary controls, status LEDs
• Rear panel: RF output, water connections, RS-232, Ethernet
• Fan-assisted air cooling with water-cooled final stage

Working Principle: An LDMOS RF amplifier generates 13.56 MHz power. An automatic PI-network matching circuit adjusts the output impedance to maintain 50 Ω match to the chamber load, ensuring maximum power transfer. Pulse modulation is achieved by gating the LDMOS driver with a high-speed MOSFET switch.

Advantages:

• Decoupled bias control enables independent tuning of etch rate vs. anisotropy
• Pulse capability supports scallop-free trench etching for 3D NAND
• High efficiency (>85%) reduces operational cost

Applicable Industries: Semiconductor — Anisotropic Etch, HAR Etch, 3D NAND, DRAM Trench Etch

Model Series: LAM 810-091xxx Series — 300 mm 13.56 MHz Bias Power Supply

Installation Requirements:

• Mount in 19-inch rack (3U), minimum 100 mm clearance on all sides
• Connect 7/16 DIN RF output to chamber (max 2 m cable)
• Connect water cooling (18°C, 3 L/min, 2 bar pressure)
• Connect RS-232/Ethernet to fab host system
• Ground chassis to facility ground (< 1 Ω)

Usage Notes:

• Do not operate with water cooling off — thermal shutdown at 55°C
• Calibrate output power quarterly with RF power meter
• Replace LDMOS modules every 80,000 wafers or 5 years (whichever comes first)