LAM 810-068158-014

Technical Specifications:

• Type: Dual-Frequency Gas Showerhead
• Diameter: 300 mm
• Frequency: 2 MHz (source power) + 13.56 MHz (bias power)
• Number of Gas Zones: 3 ~ 7 zones (customizable)
• Material: Anodized Aluminum (6061-T6) body, Y₂O₃ or Al₂O₃ coated surface
• Operating Temperature: Up to 250°C

Functional Features:

• Independent RF power control — 2 MHz controls plasma density, 13.56 MHz controls ion energy
• Multi-zone gas delivery enables radial etch uniformity tuning
• Coated interior surface reduces particle generation and fluorine attack

Performance Parameters:

Material Composition:

• Body: 6061-T6 Aluminum Alloy, hard anodized
• Coating: Yttrium Oxide (Y₂O₃) or Alumina (Al₂O₃) plasma spray
• Seals: Viton or Kalrez O-rings
• Fasteners: Stainless Steel 316L

Structural Features:

• Circular plate with precision-drilled gas holes (0.5 ~ 1.0 mm diameter)
• Internal gas manifold with zone-isolated channels
• RF electrode embedded or capacitively coupled

Working Principle: Process gases enter through the showerhead and are distributed uniformly across the wafer surface via the multi-zone hole pattern. The dual-frequency RF power creates a high-density plasma (2 MHz) while independently controlling ion bombardment energy (13.56 MHz), enabling decoupled etch rate and anisotropy control.

Advantages:

• Decoupled etch rate and ion energy control — critical for advanced node patterning
• Excellent within-wafer uniformity (< 2% WIWNU achievable)
• Y₂O₃ coating provides superior erosion resistance vs. bare Al

Applicable Industries: Semiconductor — Advanced Logic Etch, DRAM Etch, 3D NAND Etch, FinFET Processing

Model Series: LAM 810-068xxx Series — 300 mm Dual-Freq Showerhead

Installation Requirements:

• Align to chamber ceiling with precision pins
• Connect all gas lines with Swagelok fittings
• Connect 2 MHz and 13.56 MHz RF lines with 50 Ω impedance matching
• Perform leak check at 100 mTorr with N₂

Usage Notes:

• Clean interior surfaces every 10,000 wafers using NF₃ plasma
• Replace O-rings every 6 months or 30,000 wafers
• Do not exceed 5000 W at 2 MHz to prevent coating delamination