LAM 810-046015-010

Product Name: LAM Research 810-046015-010 — Ceramic Electrostatic Chuck (ESC) Assembly

Product Overview: This is a ceramic-based electrostatic chuck designed for semiconductor wafer clamping during plasma etch and deposition processes. It provides reliable, uniform clamping force across the wafer surface.

Category:
Description

Technical Specifications:

  • Type: Ceramic Electrostatic Chuck
  • Diameter: 300 mm (12-inch)
  • Clamping Voltage: 0 ~ 2000 V DC
  • Clamping Force: 1.5 ~ 3.0 N/cm² (adjustable)
  • Operating Temperature: -20°C ~ 200°C
  • Dielectric Layer Material: Al₂O₃ (Alumina) Ceramic
  • Electrode Material: Molybdenum (Mo)
  • Coolant Channel: Helium (He) backside cooling, single-zone or multi-zone configurable

Functional Features:

  • Johnsen-Rahbek (JR) clamping mechanism ensures firm wafer attachment without mechanical edge clamps
  • Helium gas heat transfer enables precise wafer temperature control from -20°C to 200°C
  • Low particle generation design minimizes contamination risk
  • Built-in RF bias capability for plasma process compatibility

Performance Parameters:

Parameter Value
Max Clamping Voltage 2000 V DC
Typical Clamping Force 2.0 N/cm² at 1000 V
Thermal Conductivity (He) >10 W/m·K
Lifespan >50,000 wafers (typical)
Flatness < 5 µm TIR

Material Composition:

  • Top Layer: Al₂O₃ Ceramic (99.5% purity)
  • Embedded Electrode: Molybdenum (Mo) thin film
  • Base Plate: Aluminum Alloy (6061-T6)
  • Cooling Tubes: OFHC Copper

Structural Features:

  • Multi-zone electrode segmentation (typically 3–5 zones) for uniform clamping
  • Embedded thermocouple or RTD sensor for real-time temperature monitoring
  • Gas channeling grooves on backside for He flow distribution

Working Principle: Utilizes the Johnsen-Rahbek effect — when high DC voltage is applied across the ceramic dielectric, the electrostatic attraction force clamps the wafer to the chuck surface. Coulomb friction between the wafer and ceramic holds the wafer in place.

Advantages:

  • No mechanical edge ring required — reduces particle generation
  • Excellent thermal uniformity via He backside cooling
  • High clamping force repeatability across full wafer surface
  • Compatible with 300 mm semiconductor fabs

Applicable Industries: Semiconductor manufacturing — Plasma Etch (RIE, ICP), PECVD, PVD/Sputtering

Model Series: LAM 810-046xxx Series — 300 mm Ceramic ESC

Installation Requirements:

  • Mount on matching LAM etch/deposition chamber platform
  • Connect He gas supply (99.999% purity) at 5–20 psi
  • Connect DC power supply (0–2000 V, max 50 mA)
  • Connect RF bias line (13.56 MHz or 2 MHz/400 kHz)

Usage Notes:

  • Always verify coolant flow before applying clamping voltage
  • Do not exceed 2000 V DC to prevent dielectric breakdown
  • Perform regular ceramic surface cleaning with deionized water
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