LAM 853-150806-001

Technical Specifications:

• Part Number: 853-150806-001
• Material Composition: Anodized Aluminum 6061-T6 body, Silicon Carbide (SiC) coated surface, Stainless Steel 316L fasteners
• Dimensional Tolerance: ±0.025 mm (±0.001 inch)
• Surface Finish: Ra 0.4 μm (16 μin) or better
• Operating Temperature Range: -20°C to +120°C (-4°F to +248°F)
• RF Frequency Compatibility: 13.56 MHz / 2 MHz / 400 kHz
• Vacuum Rating: 1 × 10⁻⁶ Torr base pressure compatibility
• Cleaning Compatibility: Piranha, HF dip, DI water rinse

Functional Features:

• Distributes process gas uniformly across 200 mm or 300 mm wafer surface
• Dual-frequency RF power coupling capability
• Integrated coolant channels for thermal management
• Replaceable SiC coating for erosion resistance

Performance Parameters:

• Gas Flow Rate: 50 – 500 sccm per zone
• Plasma Density: 1 × 10¹⁰ – 5 × 10¹¹ cm⁻³
• Etch Rate Uniformity: ≤ ±2% across wafer
• Particle Generation: < 10 particles/wafer (≥0.3 μm)

Structural Features:

• Machined from single-piece aluminum billet
• Internal spiral coolant channels (2 circuits)
• 48 gas orifice holes, 0.8 mm diameter each
• Quick-release clamp interface for chamber integration

Working Principle:
RF power is applied to the electrode, ionizing the process gas introduced through the showerhead orifices. The resulting plasma etches the wafer surface with directional ion bombardment. The SiC coating prevents sputter erosion and particle contamination.

Key Advantages:

• Extended service life due to SiC surface hardening
• Superior etch uniformity from precision-drilled orifices
• Rapid coolant response for thermal stability
• Full compatibility with Lam 853 series chamber platforms

Applicable Industries: Semiconductor Fab — Front-End-of-Line (FEOL) and Back-End-of-Line (BEOL) etch processes

Installation Requirements:

• Installed in ISO Class 1 cleanroom environment
• Torque specification: 8 N·m ± 0.5 N·m on all fasteners
• Leak test required post-installation at 1 × 10⁻⁶ Torr
• Alignment tolerance: ±0.1 mm to chamber center

Usage Notes:

• Replace SiC coating every 2,000 wafer cycles or when etch rate drift exceeds 3%
• Do not use abrasive cleaning tools on coated surfaces
• Coolant flow must be verified before RF power application