AMAT 0190-49518

Product Series: Applied Materials Matcher / RPG Series

Product Introduction:
The 0190-49518 is a 13.56 MHz RF power generator used in AMAT PECVD, etch, and sputtering chambers. It delivers up to 5000 W of RF power to the plasma via a matching network.

Category:
Description

Technical Specifications:

Parameter Value
Frequency 13.56 MHz (fixed)
Power Output 0–5000 W (continuous)
Output Impedance 50 Ω (unmatched)
VSWR Tolerance Up to 3:1 (with protection)
Harmonics < -40 dBc
Cooling Water-cooled (closed loop)
Efficiency > 85%
Dimensions ~600 × 450 × 300 mm
Weight ~45 kg
Input Power 480 V AC, 3-phase, 60 Hz

Material Composition:

  • Chassis: Powder-coated steel
  • RF Board: FR-4 with ground plane, silver-plated traces
  • Output Stage: LDMOS transistors (NXP/Freescale)
  • Cooling: Copper heat exchanger with deionized water jacket
  • Connectors: 7/16 DIN EIA flange

Structure Features:

  • Rack-mountable (4U height) or floor-standing
  • Front panel: Power meter, status LEDs, key switch
  • Rear panel: RF output, water connections, AC input, RS-485
  • Built-in arc detection and auto-shutdown

Working Principle:
AC mains power is rectified and filtered to produce DC bus voltage. An LDMOS RF amplifier converts DC to 13.56 MHz RF using a push-pull or half-bridge topology. The output is filtered (low-pass) to suppress harmonics and delivered to the matching network. A forward/reflected power sensor monitors load conditions and triggers protection if VSWR exceeds 3:1.

Advantages & Highlights:

  • 5000 W continuous power for high-throughput processes
  • > 85% efficiency — low operating cost
  • Built-in arc protection — protects chamber and generator
  • RS-485 interface — full integration with AMAT Recipe Execution

Applicable Industries:

  • Semiconductor PECVD
  • Plasma Etch (RIE, ICP)
  • Sputtering / PVD

Installation Requirements:

  • Install in equipment room with adequate ventilation (minimum 20 CFM per kW)
  • Connect 480 V 3-phase power with dedicated breaker (60 A)
  • Supply deionized water: 2–5 GPM, 20–25°C, resistivity > 1 MΩ·cm
  • Ground chassis to facility earth ground (< 5 Ω)

Usage Precautions:

  • Do not operate without cooling water — LDMOS transistors will overheat in < 30 seconds
  • Do not exceed 5000 W output
  • Replace water filter cartridge every 6 months
  • Do not bypass arc detection interlock
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