LAM 810-800081-022

Technical Specifications:

• Wafer Size: 200 mm / 300 mm
• Number of Gas Zones: 3 – 7 (configurable)
• RF Frequency: 13.56 MHz or 60 MHz (dual-frequency capable)
• RF Power: Up to 3000 W per zone
• Gas Flow: 100 – 5000 sccm total
• Uniformity: ± 2% across wafer

Functional Features:

• Multi-zone gas injection for radial uniformity control
• Integrated RF bias electrode for independent plasma density control
• Ceramic insulating ring for electrical isolation
• Cooling channels for temperature management

Performance Parameters:

Material Composition:

• Body: Anodized Aluminum 6061-T6
• Face Plate: Silicon Carbide (SiC) coated Aluminum
• Insulator: Macor® Machinable Glass Ceramic
• O-rings: Kalrez® Perfluoroelastomer (FFKM)

Structural Features:

• Circular design matching wafer diameter
• Recessed gas channels with precisely drilled orifices (± 5 μm tolerance)
• Spring-loaded mounting for thermal expansion compensation

Working Principle:
Process gas enters through the backplate and flows through precision-machined channels to the showerhead face. Gas exits through uniformly distributed orifices, creating a laminar flow over the wafer. RF power applied to the electrode ignites and sustains the plasma directly above the wafer surface.

Key Advantages:

• ± 2% gas uniformity delivers critical dimension control at advanced nodes
• SiC-coated face resists plasma etching and particle generation
• Multi-zone design enables center-to-edge etch rate tuning

Applicable Industries: Semiconductor etch (contact, trench, via), PECVD dielectric deposition

Installation Requirements:

• Mount with torque per specification: 15 N·m ± 2 N·m
• RF connection: 50 Ω coaxial, impedance-matched
• Gas lines: electropolished SS 316L tubing, ≤ 3 m length

Usage Notes:

• Clean orifices with ultrasonic DI water bath quarterly
• Replace Kalrez® O-rings every 500,000 wafer cycles
• Verify RF matching before each process campaign