LAM 810-801237-021

Technical Specifications:

• Frequency: 13.56 MHz / 60 MHz / 2 MHz (dual or triple frequency)
• RF Power: Up to 8000 W
• Electrode Gap: 20 mm – 80 mm (adjustable)
• Cooling: Water-cooled, 10–20 L/min
• Material: Anodized Aluminum or Silicon-coated Aluminum

Functional Features:

• Gas injection through electrode for in-situ cleaning
• Integrated temperature sensors (thermocouple)
• RF bias capability for ion energy control
• Ground shield ring for edge plasma confinement

Performance Parameters:

Material Composition:

• Electrode Surface: Silicon (Si) coated Aluminum 6061-T6
• Body: Anodized Aluminum 6061-T6
• Cooling Jacket: Oxygen-Free Copper (C10100)
• Insulators: Alumina (Al₂O₃, 99.8%)

Structural Features:

• Circular disc geometry with gas holes pattern
• Concentric gas injection rings
• Lift-pin holes for robot handling

Working Principle:
RF voltage applied to the upper electrode creates an oscillating electric field between the upper and lower electrodes. Electrons gain energy from the field and ionize the process gas, creating a high-density plasma. The RF bias on the lower electrode controls the ion energy incident on the wafer.

Key Advantages:

• Si-coated surface resists fluorine-based plasma erosion, extending electrode life
• Multi-frequency operation enables independent control of plasma density and ion energy
• In-situ gas injection through electrode enables chamber cleaning without venting

Applicable Industries: Semiconductor etch (Si, SiO₂, SiN, metal), MEMS, LED

Installation Requirements:

• Electrode gap set per process recipe, verified with feeler gauge
• Water cooling: DI water, 18 MΩ·cm, flow ≥ 10 L/min
• RF connection: 50 Ω, VSWR < 1.3:1

Usage Notes:

• Inspect Si coating thickness every 200,000 wafers; re-coat if < 5 μm
• Clean gas holes with compressed N₂ after each maintenance
• Monitor electrode temperature; shut down if > 90°C