LAM 810-225420-002

Product Name: LAM 810-225420-002 — Electrostatic Chuck (ESC) Assembly

Product Overview:
Clamped-type electrostatic chuck designed for 200 mm and 300 mm semiconductor wafer clamping during plasma etch processes. Provides uniform clamping force and backside helium cooling.

Category: Others

Description

Technical Specifications:

Wafer Size: 200 mm / 300 mm compatible
Clamping Force: 0 – 100 N/cm² (adjustable)
Helium Pressure: Up to 30 psi backside cooling
Voltage Range: 0 – 5000 V DC
Leakage Current: < 1 μA at 5000 V
Temperature Range: -20°C to 200°C

Functional Features:

Johnsen-Rahbek (JR) clamping mode for high thermal contact
Coulombic clamping mode for low-temperature processes
Integrated thermocouple for real-time wafer temperature monitoring
Edge ring design for uniform pressure distribution

Performance Parameters:

Parameter	Value
Clamping Uniformity	± 3% across wafer surface
Thermal Resistance	< 0.5 °C·cm²/W (with He)
Lifespan	> 1,000,000 cycles
Dielectric Breakdown Voltage	> 8000 V

Material Composition:

Electrode: Molybdenum (Mo) or Tungsten (W)
Dielectric Layer: Aluminum Nitride (AlN) or Alumina (Al₂O₃)
Ceramic Body: Aluminum Nitride (AlN), 99% purity
Edge Ring: Anodized Aluminum 6061-T6

Structural Features:

Monolithic ceramic body with embedded electrode patterns
Gas channels machined into ceramic for He flow
RF bias electrode integrated for plasma coupling

Working Principle:
High DC voltage applied between the embedded electrode and the wafer generates electrostatic attraction (Coulombic force). In JR mode, the dielectric layer allows a small leakage current that creates additional adhesion via electrostatic field polarization at the wafer-chuck interface.

Key Advantages:

Uniform clamping eliminates wafer slip during high-density plasma etch
Backside He cooling maintains wafer temperature within ± 1°C
No mechanical moving parts — zero particulate generation

Applicable Industries: Semiconductor front-end-of-line (FEOL), 3D NAND etching, advanced logic node manufacturing

Installation Requirements:

Mount on process chamber with flatness < 25 μm TIR
He gas supply: purity ≥ 99.999%, dew point < -60°C
DC power supply: 0–5000 V, current limit 10 mA

Usage Notes:

Clean chuck surface with isopropanol before each wafer lot
Do not exceed 5000 V DC to avoid dielectric breakdown
Replace ceramic body if crack detected via ultrasonic inspection

Reviews (0)

Reviews

There are no reviews yet.

Be the first to review “LAM 810-225420-002”

Shipping and Delivery

MAECENAS IACULIS

Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.

ADIPISCING CONVALLIS BULUM

Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
Diam parturient dictumst parturient scelerisque nibh lectus.

Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.