TOSHIBA 2N3A3110‑C

Product Name: Toshiba Power Semiconductor Switching Transistor Product Brief: Discrete N‑channel power semiconductor device, applied for high‑speed switching circuit, DC‑DC converter, motor‑drive circuit and switch‑mode power‑supply in industrial‑control equipment. Technical Specifications:

  • Manufacturer: TOSHIBA
Category:
Description
  • Part Number: 2N3A3110‑C
  • Device Type: N‑Channel Power Semiconductor Transistor
  • Drain‑Source Voltage Vds: 100 V
  • Continuous Drain Current Id: 12 A
  • Power Dissipation Pd: 40 W
  • Gate‑Source Threshold Voltage Vgs(th): 2.0‑4.0 V
  • Operating Junction Temperature: ‑55 °C ~ +150 °C
  • Storage Temperature: ‑55 °C ~ +150 °C
  • Package Form: Through‑hole power‑device package

Functional Features:

  • Low on‑state resistance for low conduction loss
  • Fast switching speed for high‑frequency power‑conversion circuit
  • High junction‑temperature tolerance for harsh industrial‑circuit environment
  • Internal anti‑parasitic diode for inductive‑load application
  • Stable parameter consistency in batch production

Application Scenarios:

  • Industrial switch‑mode power‑supply secondary‑side switching circuit
  • DC‑DC converter module power‑switching component
  • Small‑power DC‑motor drive circuit
  • Industrial‑control board power‑circuit repair and spare‑part replacement
  • LED driving power‑supply, solar micro‑inverter circuit

Performance Parameters:

  • Turn‑on rise‑time: 18 ns typical
  • Turn‑off fall‑time: 24 ns typical
  • Thermal resistance junction‑to‑case: 3.2 °C/W

Material Composition:

  • Semiconductor chip: Silicon‑based power‑device wafer
  • Package material: Epoxy molding compound for power‑semiconductor
  • Lead terminal: Copper‑alloy tin‑plated pin
  • Internal connection: Gold bonding wire

Structural Characteristics:

  • Through‑hole power‑device encapsulation structure
  • Metal base for external heat‑sink installation
  • Three‑pin lead‑out definition: Gate, Drain, Source

Working Principle: Control gate‑source voltage to realize turn‑on and turn‑off of drain‑source channel. Control large‑current circuit via small gate‑drive signal, complete high‑frequency power‑switching operation in power‑conversion circuit, realize energy conversion and power‑control function of circuit.

Installation Requirements:

  • Mount on matched heat‑sink for power‑dissipation; apply thermal‑conductive grease between device and heat‑sink
  • Strictly follow pin definition for PCB soldering
  • Control soldering temperature and soldering time to avoid chip thermal‑damage
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