LAM 685-247270-101

Product Category: Semiconductor Wafer Processing Component — Wafer Clamping Device

Product Introduction:
This is a ceramic-coated electrostatic chuck (ESC) used in LAM Research etch and deposition reactors. It holds wafers securely via electrostatic force during plasma processing. The ceramic coating (Al₂O₃ or AlN) provides electrical insulation and thermal conductivity for precise wafer temperature control.

Category: Others

Description

Technical Specifications:

Parameter	Value
Part Number	685-247270-101
Coating Material	Aluminum Oxide (Al₂O₃) or Aluminum Nitride (AlN)
Coating Thickness	200–400 μm
Base Material	Aluminum Alloy (6061-T6)
Chuck Diameter	200mm or 300mm (wafer size dependent)
Clamping Voltage	0–3000 VDC
Clamping Force	5–30 N/cm² (adjustable)
Operating Temperature	-20°C to +200°C
Thermal Conductivity (Coating)	20–180 W/m·K (AlN variant)
Compatible Reactors	LAM 2300 Flex, SPE, Kiyo, Systm One

Functional Features:

Electrostatic clamping eliminates mechanical edge clamps
Ceramic coating provides RF grounding path
Embedded heater/cooling channels for wafer temperature control (±1°C uniformity)
Helium backside cooling compatible

Performance Parameters:

Temperature Uniformity: ±1°C across wafer
Clamping Force Repeatability: ±2%
Dielectric Strength: > 10 kV/mm
Service Life: 5,000–10,000 wafers (typical)

Material Composition:

Component	Material
Base Electrode	6061-T6 Aluminum
Dielectric Coating	Al₂O₃ (96%) or AlN
Embedded Heater	Molybdenum or Nickel-Chrome
Cooling Channel	Machined aluminum, anodized

Working Principle:
A high-voltage DC potential is applied between the chuck electrode and the wafer (which sits on the ceramic surface). The electrostatic force clamps the wafer to the chuck. The ceramic layer acts as a dielectric, preventing current flow while allowing RF bias to pass. Embedded resistive heaters or helium channels control wafer temperature.

Key Advantages:

Edge-less clamping eliminates particle generation from edge rings
Superior temperature control for critical etch/deposition processes
Long service life with proper maintenance

Applicable Industries:

Semiconductor Front-End Fab
MEMS Manufacturing
LED/Power Device Fabrication

Installation Requirements:

Install in ISO Class 5 cleanroom
Verify RF grounding continuity (< 0.1 Ω)
Perform helium leak test at 10⁻⁶ Torr·L/s
Torque mounting hardware to 8–10 N·m

Usage Precautions:

Do not exceed 3000 VDC clamping voltage
Inspect ceramic surface for cracks before each installation
Clean with isopropanol only — no abrasive materials
Store in dry nitrogen environment

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