IXYS T2400GB45E

Product Name:​ IXYS Westcode T2400GB45E Asymmetric Press-Pack IGBT
Product Introduction:
The T2400GB45E is a high-power insulated gate bipolar transistor in hermetic press-pack housing, intended for medium-voltage drives, HVDC, and industrial converter stacks. It is not a thyristor despite frequent mislabeling; it is an asymmetric-blocking IGBT.
Category:
Description
Technical Specifications:
  • V_CES: 4500 V
  • V_DC Link (100 FIT): 2800 V permanent
  • V_GES: ±20 V peak
  • I_C (continuous): 2400 A
  • I_CRM (repetitive 1 ms): 4800 A
  • P_max: 19 kW (double-side cooled, Tsink 25 °C)
  • T_j Operating: –40 to +125 °C
  • T_stg: –40 to +125 °C
  • V_CE(sat): 2.8–3.2 V typ at 25 °C, 3.6–4.0 V at 125 °C (I_C=2400 A, V_GE=15 V)
  • Q_g: ~17 µC turn-on, ~18 µC turn-off
  • E_on: ~15 J, E_off: ~14 J (with E2400TC45C diode, L_s=200 nH)
  • R_thJK: 5.2 K/kW double-side cooled
  • Clamp Force: 55–65 kN
  • Weight: ~2 kg
  • Package: Circular press-pack, ceramic insulated
Material & Structure:
  • Chip: Enhanced planar cell silicon IGBT
  • Housing: Hermetic steel press-pack, ceramic insulator ring
  • Contacts: Copper electrode discs, spring-loaded gate pin
Working Principle:
Gate voltage above V_GE(th) (~5.3 V) injects carriers, turning on conductivity modulation between collector and emitter. Turn-off is controlled by negative gate drive; freewheeling diode (e.g., E2400TC45C) conducts reverse recovery.
Application Scenarios:
  • 2–30 MW medium-voltage AC drives
  • Rail traction converters
  • HVDC valve branches and STATCOM
Installation Requirements:
  • Mount in precision-machined heatsink with uniform 55–65 kN clamp force
  • Double-side cooling recommended
  • Torque sequence per IXYS AN2008-01
  • Gate drive ±15 V with <2.2 Ω gate resistor typical
Usage Notes:
  • Never operate without anti-parallel diode in inductive circuits
  • Keep commutation loop <200 nH
  • Store in dry <40 °C environment; avoid mechanical shock to electrodes
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