AMAT 0190-27952

Technical Specifications:

Material Composition:

• Ceramic Layer: Alumina (Al₂O₃, 99.5% purity)
• Electrodes: Molybdenum (Mo) embedded in ceramic
• Base Plate: 6061-T6 Aluminum
• Cooling Channels: Internal He gas passages in Al base
• Insulation: Alumina dielectric layer (~0.5 mm)

Structure Features:

• Embedded Mo electrode grid pattern for uniform E-field
• He gas cooling channels machined into aluminum base
• RF bias electrode (separate from DC chuck)
• Edge ring for wafer containment
• Lift pin holes with ceramic sleeves

Working Principle:
A high negative DC voltage is applied to the embedded Mo electrodes. The wafer (grounded via chamber walls) forms a capacitor with the chuck. The resulting electrostatic force (Coulomb attraction) clamps the wafer to the chuck surface. The force is: F = ½ × C × V² / d², where C is capacitance, V is voltage, d is gap.

Advantages & Highlights:

• No mechanical clamps — zero particle generation from clamp edges
• Uniform clamping across entire wafer surface
• Fast de-chuck (< 1 second) for high throughput
• He backside cooling provides excellent thermal control

Applicable Industries:

• Semiconductor Manufacturing (Etch)
• MEMS
• Advanced Packaging

Installation Requirements:

• Mount on chamber pedestal with O-ring seal
• Connect DC power supply (0 to -3000 V)
• Connect He gas supply (5–20 Torr, 99.999% purity)
• Verify leakage current < 1 µA at operating voltage

Usage Precautions:

• Do not apply voltage with no wafer present — risk of arcing
• Maintain He gas purity > 99.999%
• Clean chuck surface with DI water + isopropanol after every PM
• Do not exceed -3000 V — risk of dielectric breakdown