Toshiba 2N3A8204-B

Product Name: Toshiba 2N3A8204-B NPN Silicon Power Transistor

Product Introduction: The 2N3A8204-B is a high-voltage, high-current NPN silicon bipolar power transistor manufactured by Toshiba. Optimized for high-frequency switching operation, it delivers reliable performance in power conversion and motor drive circuits.

Category:
Description
Technical Specifications:
  • Device type: NPN silicon bipolar power transistor
  • Package style: TO-220AB
  • Collector-emitter voltage (VCEO): 400 V minimum
  • Continuous collector current (IC): 20 A
  • Total power dissipation (PD): 80 W at 25°C case temperature
  • Mounting type: Through-hole
  • Optimized for high-frequency switching

    Functional Features:

  • High voltage rating for demanding power circuits
  • High current handling capacity for heavy load applications
  • Fast switching speed for efficient power conversion
  • Strict manufacturing and testing ensures high reliability
  • Robust TO-220AB package provides excellent thermal performance

    Application Scenarios:

  • Switching power supply primary switching circuits
  • DC-to-AC inverter circuits
  • DC motor drive and speed control systems
  • Industrial power electronic systems
  • High-voltage power regulation circuits

    Performance Parameters:

  • 400 V minimum collector-emitter breakdown voltage
  • 20 A continuous collector current rating
  • 80 W total power dissipation at 25°C
  • Fast switching characteristics for high-frequency operation

    Material & Structure:

  • Semiconductor material: Monocrystalline silicon
  • Package: TO-220AB molded plastic with metal heat sink tab
  • Terminals: Tin-plated copper leads
  • Internal structure: Planar epitaxial transistor design

    Working Principle: As a bipolar junction transistor, it controls current flow between collector and emitter via a small base current. In switching applications, it operates between fully saturated (on) and cut-off (off) states to control power delivery to loads, enabling efficient power conversion and motor control.

    Installation Requirements:

  • Mount on appropriately sized heat sink to maintain operating temperature limits
  • Solder to PCB with proper pad layout and spacing
  • Observe correct pin polarity for collector, base and emitter
  • Apply electrical insulation between device and heat sink when required
  • Follow ESD handling procedures during assembly

    Usage Notes:

  • Do not exceed absolute maximum voltage, current and power ratings
  • Derate power dissipation at elevated temperatures per datasheet specifications
  • Ensure adequate heat sinking for continuous high-current operation
  • Store and handle in ESD-protective environments to prevent device damage
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