Infineon FZ1200R12KF1

Product Name: 1200 V / 1200 A IGBT Power Module (IHM-B Housing)
Product Introduction: A high-power Insulated Gate Bipolar Transistor (IGBT) module from Infineon Technologies (formerly Eupec), configured as a single switch or dual/phase-leg topology in the IHM-B (International High-power Module) package. It is designed for high-current inverter and converter applications.

Category: Others

Description

Technical Specifications:
- Collector-Emitter Voltage (VCES): 1200 V
- Nominal Collector Current (IC nom): 1200 A (Tc = 100 °C, Tvj max 175 °C)
- Repetitive Peak Current (ICRM): 2400 A (tp = 1 ms)
- Saturation Voltage (VCE(sat)): Typ. ~2.15–2.7 V at 1200 A, 15 V GE
- Gate-Emitter Voltage (VGES): ±20 V
- Total Power Dissipation (Ptot): ~7.8 kW (Tc = 25 °C)
- Switching Times: ton / toff in microsecond range dependent on RG (on ~1.6 Ω, off ~0.62 Ω)
- Thermal Resistance (RthJC): Specified per IGBT and diode (consult datasheet for exact °C/W)
- Package: IHM130 / IHM-B, Screw terminals, CTI > 400
**Functional Features:
- Low Switching Losses: Optimized for high-frequency operation in large drives.
- Extended Operating Temperature: Tvj op up to 150 °C or 175 °C (depending on exact KF1/KF4 variant).
- High Power Density: Compact housing for very high current handling.
Material & Structure: AlSiC or copper-baseplate with silicone gel coating for high-voltage insulation; ceramic substrate (Al₂O₃ or AlN) for electrical isolation and thermal transfer; heavy-duty screw terminals for busbar connection.
Application Scenarios: Medium-voltage drives, wind turbine converters, traction inverters, high-power motor drives, uninterruptible power supplies (UPS), and HVDC auxiliary converters.
Working Principle: When a positive gate-emitter voltage (~+15 V) is applied, the IGBT turns on allowing high-current flow from collector to emitter with low conduction loss; applying negative bias (~-15 V) turns it off rapidly. Free-wheeling diodes conduct reverse current during switching transitions.
Installation & Notes: Requires torque-controlled mounting to heatsink (specified Nm) using thermal grease for optimal Rth. Gate drive must be isolated and matched to module characteristics. Observe creepage/clearance distances for 1200 V rating. Store in anti-static, dry conditions; avoid mechanical stress on terminals.

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