AMAT 1080-01772

Model Series: 1080 Series — Etch Chamber Gas Distribution Components

Product Introduction:
The AMAT 1080-01772 is a precision-engineered gas distribution plate (showerhead) used in Applied Materials dielectric and polysilicon etch chambers. It distributes process gases uniformly across the wafer surface while withstanding high-temperature plasma exposure. The component is part of the upper electrode assembly in AMAT etch platforms.

Category:
Description

Technical Specifications:

  • Part Number: 1080-01772
  • Application: Applied Materials Etch Chambers (Centura, Producer, MxP series)
  • Material: Anodized Aluminum 6061-T6 body, Yttrium Oxide (Y₂O₃) plasma-spray coating
  • Passage Count: 96 gas holes
  • Hole Diameter: 0.6 mm ± 0.025 mm
  • Operating Temperature: Up to 200°C (392°F)
  • Plasma Exposure: Continuous RF exposure at 13.56 MHz
  • Dimensions: 300 mm diameter (wafer-matched)
  • Thickness: 12 mm ± 0.5 mm
  • Surface Finish: Ra 0.8 μm (32 μin)
  • Cleaning Process: HF dip + DI water + N₂ dry

Functional Features:

  • 96 precision-drilled gas orifices for uniform distribution
  • Y₂O₃ coating provides erosion resistance against fluorine-based plasmas
  • Internal gas plenum with baffle for flow equalization
  • RF ground path through aluminum body

Performance Parameters:

  • Gas Flow Uniformity: ≤ ±1.5% across 300 mm wafer
  • Particle Generation: < 5 particles/wafer (≥0.2 μm)
  • Etch Rate Uniformity Contribution: ≤ ±1%
  • Coating Thickness: 150–200 μm Y₂O₃

Structural Features:

  • Single-piece machined aluminum disc
  • Internal spiral baffle channel
  • O-ring seal groove (Viton, 2 mm cross-section)
  • RF grounding tab (stainless steel)

Working Principle:
Process gas enters the internal plenum, passes through the spiral baffle for flow equalization, then exits through 96 precision orifices onto the wafer surface. The Y₂O₃ coating protects the aluminum from sputter erosion by the fluorine plasma, maintaining orifice geometry over thousands of wafer cycles.

Key Advantages:

  • Y₂O₃ coating extends service life 3× versus uncoated aluminum
  • 96-hole pattern optimized for 300 mm wafer uniformity
  • Internal baffle eliminates center-to-edge flow variation
  • Direct OEM replacement ensures chamber matching

Applicable Industries: Semiconductor manufacturing — Dielectric etch, polysilicon etch, contact etch

Installation Requirements:

  • Install in ISO Class 1 or better cleanroom
  • Align using 3 dowel pins to chamber body
  • Torque 6 fasteners to 5 N·m ± 0.5 N·m in star pattern
  • Perform helium leak test: < 1 × 10⁻⁸ Torr·L/s

Usage Notes:

  • Replace when particle count exceeds 10/wafer
  • Do not use metal tools on Y₂O₃ surface
  • Clean with approved AMAT-specified recipe only
  • Typical lifetime: 10,000–15,000 wafers
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