AMAT 0090-07135

Manufacturer: Applied Materials, Inc.

Product Overview:
Precision-machined gas manifold used in AMAT CVD (Chemical Vapor Deposition) and Etch process chambers. This component distributes process gases uniformly across the wafer surface during thin-film deposition.

Category: Others

Description

Material Composition:

Body: 316L Stainless Steel — Electropolished, Ra ≤ 20 µin
Seals: Kalrez® Perfluoroelastomer (FFKM) — 70 Durometer
Fasteners: Inconel 718 hex-head bolts
Internal Coating: Anodized Aluminum Oxide (Al₂O₃) — 50 µm thick

Technical Specifications:

Parameter	Value
Number of Gas Zones	5
Gas Inlet Port Size	1/4″ VCR Female
Outlet Port Count	12
Operating Pressure	0.5 – 10 Torr
Temperature Range	25°C – 450°C
Gas Compatibility	SiH₄, NH₃, WF₆, TiCl₄, O₂, N₂, Ar
Leak Rate Requirement	< 1 × 10⁻⁹ Torr·L/s (He leak test)

Structural Features:

5-zone radial gas distribution with independent mass-flow control per zone
Dual-seal VCR connection at each gas inlet for leak-tight integrity
Internal flow channels CNC-machined to ±0.005 mm tolerance

Working Principle:
Process gas enters via VCR inlet, is divided into 5 independent zones through internal micro-channels, and exits through 12 uniformly spaced outlets. Each zone is controlled by an independent MKS mass flow controller (MFC) upstream.

Key Advantages:

Uniform gas distribution across 300 mm wafer — < 2% non-uniformity
Electropolished internal surfaces minimize particle generation
Full metal-seal design eliminates elastomer degradation at high temperature

Applicable Industries:
Semiconductor front-end manufacturing — Logic, Memory, Foundry

Installation Requirements:

Torque VCR nuts to 22 in-lbs (2.5 N·m) using calibrated torque wrench
Perform He leak check at 1 × 10⁻⁹ Torr·L/s before chamber pump-down
Bake out at 200°C for 4 hours prior to first use

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