ygo 7702 8070-0102-35

Laser Type: Helium – neon laser
Wavelength: 633 nm
Output Power: > 400 µW
Beam Diameter: 3 mm or 6 mm
Usable Beam Length: 2 m
Beam Pointing Stability: < 0.1 arc sec/°C
Operating Temperature: 10 – 30 °C
Vacuum Wavelength Stability: 0.01 ppm/24 hour
Mounting Type: May have different mounting options, such as with plastic mounting feet.
Weight: Approximately 5.5 kg (for some models of the 7702 laser head)

Category: Others

Description

Functional Features

High – Precision Measurement: Can provide sub – nanometer – level measurement accuracy, suitable for high – precision position measurement and surface morphology measurement.
Stable Output: Adopts helium – neon technology to ensure stable dual – frequency output, which is the basis for high – precision position metrology and can ensure accurate and reliable measurement results in various complex industrial environments.
Optical Isolation: Has an optical isolation function, which can effectively protect the laser from the back – reflection interference of the interferometer system components, improving the service life of the laser and providing greater flexibility and ease of use.
Flexible Configuration: Can be used with the ZMI 501a measurement enclosure to provide up to two measurement axes. It is also compatible with the ZMI 240x and 4X04 series measurement boards, providing flexible solutions for various measurement tasks.

Application Scenarios

Industrial Automation: Used for precise control and measurement in production lines, such as the position control and dimension measurement of mechanical parts.
Precision Measurement: Applicable to surface topography measurement, optical element analysis, and three – dimensional measurement, etc.
Optical Component Manufacturing: Helps in the production and quality inspection of optical components, ensuring the accuracy of their optical properties and dimensions.
Semiconductor Manufacturing: Can be used for automatic inspection of semiconductor wafers, capable of detecting high – density devices, ultra – low devices, and substrates with reduced line width.

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